PHP225_11 Datasheet, PDF (5/11 Pages) NXP Semiconductors – Dual P-channel intermediate level FET

NXP Semiconductors
PHP225
Dual P-channel intermediate level FET
600
C
(pF)
400
200
0
0
mbe144
C_iss
C_oss
C_rss
−10
−20 _{VDS (V)} −30
−10 _{VGS =}
I_D
−10 V −7.5 V
(A)
−8
mbe154
−6 V
−6
−4
−2
0
0
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−2
−4
−6
−8 −10 −12
V_DS (V)
Fig 3. Capacitance as a function of drain-source
voltage; P-channel; typical values
−10
I_D
(A)
−8
−6
−4
−2
0
0
mbe157
−2
−4
−6
−8
V_GS (V)
Fig 4. Output characteristics: drain current as a
function of drain-source voltage; P-channel;
typical values
−10
V_GS
(V)
−8
mbe145
−6
−4
−2
0
0
−2
−4
−6
−8
−10
Q_g (nC)
Fig 5. Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
Fig 6. Gate-source voltage as a function of gate
charge; P-channel; typical values
PHP225
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 4 January 2011
© NXP B.V. 2011. All rights reserved.
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