BFU660F Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
200
C_CBS
(fF)
160
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25
fT
(GHz)
20
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120
15
80
10
40
5
0
0
4
8
12
V_CB (V)
Fig 4.
f = 1 MHz, T_amb = 25 °C.
Collector-base capacitance as a function of
collector-base voltage; typical values
30
G
(dB)
20
10
MSG
(1)
(2)
(3)
(4)
0
0
20
40
60
80
100
I_C (mA)
Fig 5.
V_CE = 1 V; f = 2 GHz; T_amb = 25 °C.
Transition frequency as a function of collector
current; typical values
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G_p(max)
0
0
20
40
60
V_CE = 1 V; T_amb = 25 °C.
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
Fig 6. Gain as a function of collector current; typical value
80
100
I_C (mA)
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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