BFU660F Datasheet, PDF (1/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
„ Low noise high linearity RF transistor
„ High output third-order intercept point 27 dBm at 1.8 GHz
„ 40 GHz f_T silicon technology
1.3 Applications
„ Analog/digital cordless applications
„ X-band high output buffer amplifier
„ ZigBee
„ SDARS second stage LNA
„ LTE, cellular, UMTS