BFU660F Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
4. Marking
Table 4. Marking
Type number
BFU660F
Marking
D3*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
P_tot
total power dissipation
T_sp ≤ 90 °C
[1] _-
T_stg
storage temperature
−65
T_j
junction temperature
-
[1] T_sp is the temperature at the solder point of the emitter lead.
Max
16
5.5
2.5
60
225
+150
150
Unit
V
V
V
mA
mW
°C
°C
6. Thermal characteristics
Table 6.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ Unit
270 K/W
BFU660F
Product data sheet
300
P_tot
(mW)
250
001aam822
200
150
100
50
0
0
40
Fig 1. Power derating curve
80
120
160
T_sp (°C)
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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