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| BFU660F Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
V(BR)CBO
V(BR)CEO
IC
ICBO
hFE
CCES
CEBS
CCBS
fT
collector-base breakdown voltage
collector-emitter breakdown voltage
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
Gp(max) maximum power gain
|s21|2
insertion power gain
NF
noise figure
Gass
associated gain
PL(1dB) output power at 1 dB gain compression
Conditions
IC = 2.5 μA; IE = 0 mA
IC = 1 mA; IB = 0 mA
IE = 0 mA; VCB = 8 V
IC = 10 mA; VCE = 2 V
VCB = 2 V; f = 1 MHz
VEB = 0.5 V; f = 1 MHz
VCB = 2 V; f = 1 MHz
IC = 20 mA; VCE = 1 V; f = 2 GHz;
Tamb = 25 °C
IC = 30 mA; VCE = 1 V; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IC = 30 mA; VCE = 1 V; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IC = 6 mA; VCE = 2 V; ÎS = Îopt;
Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IC = 6 mA; VCE = 2 V; ÎS = Îopt;
Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
IC = 60 mA; VCE = 4 V;
ZS = ZL = 50 Ω; Tamb = 25 °C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
Min Typ
16 -
5.5 -
- 30
--
90 135
- 297
- 664
- 138
- 21
Max Unit
-V
-V
60 mA
100 nA
180
- fF
- fF
- fF
- GHz
[1]
- 25 - dB
- 24 - dB
- 22 - dB
- 12.5 - dB
- 20 - dB
- 18.5 - dB
- 16 - dB
- 8.5 - dB
- 0.60 - dB
- 0.65 - dB
- 0.70 - dB
- 1.20 - dB
- 21 - dB
- 20 - dB
- 17.5 - dB
- 12 - dB
- 17 -
- 17 -
- 16 -
- 18.5 -
dBm
dBm
dBm
dBm
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 11 January 2011
© NXP B.V. 2011. All rights reserved.
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