BFU660F Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU660F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
h_FE
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
C_CBS
f_T
collector-base capacitance
transition frequency
IP3_O
G_p(max)
output third-order intercept
point
maximum power gain
NF
noise figure
P_L(1dB)
output power at 1 dB gain
compression
Conditions
open emitter
open base
open collector
T_sp ≤ 90 °C
I_C = 10 mA; V_CE = 2 V;
T_j = 25 °C
V_CB = 2 V; f = 1 MHz
I_C = 20 mA; V_CE = 1 V;
f = 2 GHz; T_amb = 25 °C
I_C = 40 mA; V_CE = 4 V;
f = 5.8 GHz; T_amb = 25 °C
I_C = 30 mA; V_CE = 1 V;
f = 1.8 GHz; T_amb = 25 °C
I_C = 6 mA; V_CE = 2 V;
f = 1.8 GHz; Γ_S = Γ_opt;
T_amb = 25 °C
I_C = 60 mA; V_CE = 4 V;
Z_S = Z_L = 50 Ω;
f = 1.8 GHz; T_amb = 25 °C
Min Typ
--
--
--
- 30
[1] _-
-
90 135
- 138
- 21
- 28
[2] _-
24
- 0.65
- 17
[1] T_sp is the temperature at the solder point of the emitter lead.
[2] G_p(max) is the maximum power gain, if K > 1. If K < 1 then G_p(max) = MSG.
Max Unit
16 V
5.5 V
2.5 V
60 mA
225 mW
180
- fF
- GHz
- dBm
- dB
- dB
- dBm
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
3
4
4
2
1
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU660F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU660F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 January 2011
© NXP B.V. 2011. All rights reserved.
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