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BCM856BS Datasheet, PDF (6/14 Pages) NXP Semiconductors – PNP/PNP matched double transistors | |||
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NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
â0.20
IC
(A)
â0.16
â0.12
â0.08
â0.04
IB (mA) = â2.5
â2.25
â2.0
â1.75
â1.5
â1.25
006aaa540
â1.0
â0.75
â0.5
â0.25
600
hFE
(1)
400
(2)
200
(3)
006aaa541
0
0
â2
â4
â6
â8
â10
VCE (V)
Tamb = 25 °C
Fig 1. Collector current as a function of
collector-emitter voltage; typical values
0
â10â2 â10â1
â1
â10
â102
â103
IC (mA)
VCE = â5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 2. DC current gain as a function of collector
current; typical values
â1.3
VBEsat
(V)
â1.1
â0.9
(1)
â0.7
(2)
(3)
â0.5
â0.3
006aaa542
â10
VCEsat
(V)
â1
â10â1
(1)
(2)
(3)
006aaa543
â0.1
â10â1
â1
â10
â102
â103
IC (mA)
IC/IB = 20
(1) Tamb = â55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
â10â2
â10â1
â1
â10
â102
â103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = â55 °C
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 â 7 August 2008
© NXP B.V. 2008. All rights reserved.
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