BCM856BS Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP/PNP matched double transistors

NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
Table 8. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_BE
base-emitter voltage
V_CE = −5 V;
I_C = −2 mA
V_CE = −5 V;
I_C = −10 mA
C_c
collector capacitance
V_CB = −10 V;
I_E = i_e = 0 A;
f = 1 MHz
C_e
emitter capacitance
V_EB = −0.5 V;
I_C = i_c = 0 A;
f = 1 MHz
f_T
transition frequency
V_CE = −5 V;
I_C = −10 mA;
f = 100 MHz
NF
noise figure
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 10 Hz to
15.7 kHz
V_CE = −5 V;
I_C = −0.2 mA;
R_S = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
h_FE1/h_FE2 h_FE matching
V_BE1−V_BE2 V_BE matching
V_CE = −5 V;
I_C = −2 mA
V_CE = −5 V;
I_C = −2 mA
Min
[2] _−600
[2] _-
-
-
100
-
-
[3] _0.9
[4] _-
[1] V_BEsat decreases by about 1.7 mV/K with increasing temperature.
[2] V_BE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
Typ
−650
-
-
10
175
1.6
3.1
1
-
Max
−700
−760
2.2
-
-
-
-
-
2
Unit
mV
mV
pF
pF
MHz
dB
dB
mV
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
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