BCM856BS Datasheet, PDF (4/14 Pages) NXP Semiconductors – PNP/PNP matched double transistors

NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per transistor
R_th(j-a) thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
R_th(j-a) thermal resistance from junction to
ambient
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Conditions
in free air
in free air
Min Typ Max Unit
[1] _-
-
625 K/W
[1] _-
-
500 K/W
[1] _-
-
416 K/W
[1] _-
-
328 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
V_CB = −30 V;
I_E = 0 A
V_CB = −30 V;
I_E = 0 A;
T_j = 150 °C
V_EB = −5 V;
I_C = 0 A
V_CE = −5 V;
I_C = −10 µA
V_CE = −5 V;
I_C = −2 mA
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA;
I_B = −5 mA
I_C = −10 mA;
I_B = −0.5 mA
I_C = −100 mA;
I_B = −5 mA
Min Typ Max Unit
-
-
−15 nA
-
-
−5
µA
-
-
−100 nA
-
250 -
200 290 450
-
−50 −200 mV
-
−200 −400 mV
[1] _-
−760 -
mV
[1] _-
−920 -
mV
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
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