BCM856BS Datasheet, PDF (3/14 Pages) NXP Semiconductors – PNP/PNP matched double transistors

NXP Semiconductors
BCM856BS; BCM856DS
PNP/PNP matched double transistors
4. Marking
Table 5. Marking codes
Type number
BCM856BS
BCM856BS/DG
BCM856DS
BCM856DS/DG
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
*BS
PB*
DS
R9
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
open emitter
-
open base
-
open collector
-
-
single pulse;
-
t_p ≤ 1 ms
T_amb ≤ 25 °C
[1] _-
BCM856DS (SOT457)
[1] _-
BCM856DS/DG (SOT457)
Per device
P_tot
total power dissipation
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
T_amb ≤ 25 °C
[1] _-
BCM856DS (SOT457)
[1] _-
BCM856DS/DG (SOT457)
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
−80 V
−65 V
−5
V
−100 mA
−200 mA
200 mW
250 mW
300 mW
380 mW
150 °C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM856BS_BCM856DS_1
Product data sheet
Rev. 01 — 7 August 2008
© NXP B.V. 2008. All rights reserved.
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