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PSMN2R0-30YL_11 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
NXP Semiconductors
PSMN2R0-30YL
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 1 mA; VDS = VGS; Tj = 150 °C;
see Figure 12
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 12
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 15 A; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 150 °C;
see Figure 13
RG
gate resistance
Dynamic characteristics
VGS = 10 V; ID = 15 A; Tj = 25 °C
f = 1 MHz
QG(tot)
total gate charge
ID = 10 A; VDS = 12 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
see Figure 14
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 10 A; VDS = 12 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold
gate-source charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
VDS = 12 V; see Figure 14;
see Figure 15
Ciss
input capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; see Figure 16
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 12 V; RL = 0.5 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω
PSMN2R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 March 2011
Min Typ Max Unit
30 -
-
V
27 -
-
V
1.3 1.7 2.15 V
0.65 -
-
V
-
-
2.45 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
2.13 2.63 mΩ
-
-
3.3 mΩ
-
1.55 2
mΩ
-
0.75 1.5 Ω
-
64
-
nC
-
59
-
nC
-
30
-
nC
-
9.8 -
nC
-
6.6 -
nC
-
3.2 -
nC
-
7.5 -
nC
-
2.34 -
V
-
3980 -
pF
-
857 -
pF
-
347 -
pF
-
39
-
ns
-
65 -
ns
-
63
-
ns
-
28
-
ns
© NXP B.V. 2011. All rights reserved.
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