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| PSMN2R0-30YL_11 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 30 V 2 mΩ logic level MOSFET in LFPAK | |||
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NXP Semiconductors
PSMN2R0-30YL
N-channel 30 V 2 m⦠logic level MOSFET in LFPAK
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 4.5 V; ID = 10 A;
VDS = 12 V; see Figure 14
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source
ID = 100 A; Vsup ⤠30 V;
avalanche energy RGS = 50 â¦; unclamped
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
30 -
nC
-
-
151 mJ
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN2R0-30YL
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN2R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 10 March 2011
© NXP B.V. 2011. All rights reserved.
2 of 14
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