PSMN2R0-30YL_11 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 30 V 2 mΩ logic level MOSFET in LFPAK

PSMN2R0-30YL
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Rev. 4 — 10 March 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
industrial and communications applications.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for logic level gate drive
sources
1.3 Applications
„ Class-D amplifiers
„ DC-to-DC converters
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
T_j
junction
temperature
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 10 A;
V_DS = 12 V; see Figure 14;
see Figure 15
Min Typ Max Unit
-
-
30 V
[1] _-
-
100 A
-
-
97 W
-55 -
175 °C
-
1.55 2
mΩ
-
7.5 -
nC