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| PSMN2R0-30YL_11 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 30 V 2 mΩ logic level MOSFET in LFPAK | |||
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NXP Semiconductors
103
ID
(A)
102
10
1
10-1
Limit RDSon = VDS / ID
(1)
1
PSMN2R0-30YL
N-channel 30 V 2 m⦠logic level MOSFET in LFPAK
003aac529
10 μs
DC
10
100 μs
1 ms
10 ms
100 ms
VDS (V)
102
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
0.4 1.28 K/W
10
Zth(j-mb)
(K/W)
003aac481
1
δ = 0.5
0.2
10-1 0.1
0.05
0.02
10-2
P
δ = tp
T
single shot
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
10-1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN2R0-30YL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 â 10 March 2011
© NXP B.V. 2011. All rights reserved.
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