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| BAS45AL Datasheet, PDF (5/11 Pages) NXP Semiconductors – Low-leakage diode | |||
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NXP Semiconductors
BAS45AL
Low-leakage diode
104
IR
(nA)
103
102
10
mbd456
max
typ
1
10â1
0
50
100
150
Tj (°C)
Fig 4.
VR = 125 V
Reverse current as a function of junction
temperature
8. Test information
3
Cd
(pF)
2
mbg524
1
0
0
5
10
15 VR (V) 20
Fig 5.
f = 1 MHz; Tj = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
RS = 50 Ω
V = VR + IF Ã RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
Fig 6. Reverse recovery time test circuit and waveforms
t
+ IF
trr
t
(1)
output signal
BAS45AL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 â 6 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 11
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