BAS45AL Datasheet, PDF (3/11 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
BAS45AL
Low-leakage diode
6. Thermal characteristics
Table 6.
Symbol
R_th(j-t)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to tie-point
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
-
-
300 K/W
[1] _-
-
375 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V_F
forward voltage
I_F = 1 mA
-
-
I_F = 10 mA
-
-
I_F = 100 mA
-
-
I_R
reverse current
E_max = 100 lx
V_R = 125 V
-
-
V_R = 30 V; T_j = 125 °C
-
-
V_R = 125 V; T_j = 125 °C
-
-
V_R = 125 V; T_j = 150 °C
-
-
C_d
diode capacitance
V_R = 0 V; f = 1 MHz
-
-
t_rr
reverse recovery time
[1] _-
1.5
[1] When switched from I_F = 10 mA to I_R = 10 mA; R_L = 100 Ω; measured at I_R = 1 mA.
Max Unit
780 mV
860 mV
1000 mV
1
nA
300 nA
500 nA
2
μA
4
pF
-
μs
BAS45AL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 6 August 2010
© NXP B.V. 2010. All rights reserved.
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