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BAS45AL Datasheet, PDF (2/11 Pages) NXP Semiconductors – Low-leakage diode
NXP Semiconductors
BAS45AL
Low-leakage diode
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BAS45AL
-
hermetically sealed glass surface-mounted package;
2 connectors
Version
SOD80C
4. Marking
Table 4. Marking codes
Type number
BAS45AL
Marking code
marking band
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
[1] -
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak
forward current
square wave
tp = 1 μs
tp = 1 ms
tp = 1 s
Ptot
total power dissipation Tamb ≤ 25 °C
Tj
junction temperature
Tstg
storage temperature
[2]
-
-
-
[1] -
-
−65
Max
125
125
250
625
4
1
0.5
400
175
+175
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Tj = 25 °C prior to surge.
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
BAS45AL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 6 August 2010
© NXP B.V. 2010. All rights reserved.
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