BAS45AL Datasheet, PDF (4/11 Pages) NXP Semiconductors – Low-leakage diode

NXP Semiconductors
BAS45AL
Low-leakage diode
300
I_F
(mA)
200
mbg522
300
I_F
(mA)
200
mbg523
(1) (2) (3)
100
100
0
0
100
T_amb (°C)
200
FR4 PCB, standard footprint
Fig 1. Forward current as a function of ambient
temperature; derating curve
10²
I_FSM
(A)
10
0
0
0.5
1.0 _{VF (V)} 1.5
(1) T_j = 150 °C; typical values
(2) T_j = 25 °C; typical values
(3) T_j = 25 °C; maximum values
Fig 2. Forward current as a function of forward
voltage
mbg704
1
10^−1
1
10
10²
10³
10⁴
t_p (μs)
Fig 3.
Based on square wave currents.
T_j = 25 °C prior to surge
Non-repetitive peak forward current as a function of pulse duration; maximum values
BAS45AL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 6 August 2010
© NXP B.V. 2010. All rights reserved.
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