BAS45AL Datasheet, PDF (1/11 Pages) NXP Semiconductors – Low-leakage diode

BAS45AL
Low-leakage diode
Rev. 5 — 6 August 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial medium-speed switching diode with a low leakage current, encapsulated in a
small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) package.
1.2 Features and benefits
„ Continuous reverse voltage: max. 125 V
„ Repetitive peak forward current: max. 625 mA
„ Low reverse current: max. 1 nA
„ Switching time: typ. 1.5 μs
1.3 Applications
„ Low leakage current applications
1.4 Quick reference data
Table 1.
Symbol
I_F
V_R
V_F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
I_F = 100 mA
Min Typ Max Unit
[1] _-
-
250 mA
-
-
125 V
-
-
1000 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking band indicates the cathode.
Simplified outline
[1]
k
a
Graphic symbol
1
2
006aab040