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BUK135-50L Datasheet, PDF (3/13 Pages) NXP Semiconductors – Logic level TOPFET | |||
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Philips Semiconductors
Logic level TOPFET
SMD version of BUK124-50L
Product Specification
BUK135-50L
THERMAL CHARACTERISTIC
SYMBOL PARAMETER
Thermal resistance
Rth j-mb
Junction to mounting base
CONDITIONS
-
MIN. TYP. MAX. UNIT
-
1.2 1.39 K/W
OUTPUT CHARACTERISTICS
Limits are for -40ËC ⤠Tmb ⤠150ËC; typicals are for Tmb = 25ËC unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
VIS = 0 V
V(CL)DSS Drain-source clamping voltage ID = 10 mA
50
IDM = 4 A; tp ⤠300 µs; δ ⤠0.01
50
IDSS
Drain source leakage current1 VPS = 0 V; VDS = 40 V
-
Tmb = 25ËC
-
On-state
tp ⤠300 µs; δ ⤠0.01; VPS ⥠4 V
RDS(ON)
Drain-source resistance
IDM = 10 A; VIS ⥠4.4 V
-
Tmb = 25ËC
-
TYP.
-
60
-
0.1
-
21
MAX. UNIT
70
V
70
V
100 µA
10 µA
50 mâ¦
28 mâ¦
INPUT CHARACTERISTICS
Limits are for -40ËC ⤠Tmb ⤠150ËC; typicals are for Tmb = 25ËC unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
MIN.
Normal operation
VIS(TO)
IIS
V(CL)IS
RIG
IISL
Input threshold voltage2
ID = 1 mA
0.6
Tmb = 25ËC 1.1
Input current
VIS = 5 V
-
Input clamping voltage
II = 1 mA
5.5
Internal series resistance3
to gate of power MOSFET
-
Overload protection latched VPS ⥠4 V
Input current
VIS = 5 V
1
TYP.
-
1.6
16
6.4
1.7
2.7
MAX. UNIT
2.6 V
2.1 V
100 µA
8.5 V
-
kâ¦
4 mA
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2 The measurement method is simplified if VPS = 0 V, in order to distinguish ID from IDSP. Refer to OPEN CIRCUIT LOAD DETECTION
CHARACTERISTICS.
3 This is not a directly measurable parameter.
July 2002
3
Rev 1.100
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