BUK135-50L Datasheet, PDF (2/13 Pages) NXP Semiconductors – Logic level TOPFET

Philips Semiconductors
Logic level TOPFET
SMD version of BUK124-50L
Product Specification
BUK135-50L
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
Continuous voltage
V_DS
Drain source voltage¹
Continuous currents
V_IS = 0 V
I_D
Drain current
V_PS = 5 V; T_mb = 25˚C
I_I
Input current
I_F
Flag current
I_P
Protection supply current
Thermal
V_PS = 0 V; T_mb = 85˚C
P_tot
Total power dissipation
T_stg
T_j
Storage temperature
Junction temperature²
T_sold
Mounting base temperature
T_mb = 25˚C
continuous
during soldering
MIN.
-
-
-
-5
-5
-5
-
-55
-
-
MAX.
50
self -
limited
30
5
5
5
90
175
150
260
UNIT
V
A
A
mA
mA
mA
W
˚C
˚C
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
2
UNIT
kV
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply
connected, TOPFET can protect
itself from two types of overload -
overtemperature and short circuit
load.
For overload conditions an n-MOS
transistor turns on between the
input and source to quickly
discharge the power MOSFET
gate capacitance.
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
SYMBOL PARAMETER
Overload protection³
REQUIRED CONDITION
protection supply
MIN. MAX. UNIT
V_DS
Drain source voltage
V_PS ≥ 4 V
0
35
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
E_DSM
E_DRM
Inductive load turn off
Non-repetitive clamping energy
Repetitive clamping energy
I_DM = 20 A; V_DD ≤ 20 V
T_mb = 25˚C
T_mb ≤ 95˚C; f = 250 Hz
-
350
mJ
-
45
mJ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously
latched, it would be reset by this condition.
July 2002
2
Rev 1.100