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OPA2830 Datasheet, PDF (3/43 Pages) National Semiconductor (TI) – Dual, Low-Power, Single-Supply, Wideband OPERATIONAL AMPLIFIER
OPA2830
www.ti.com.................................................................................................................................................. SBOS309D – AUGUST 2004 – REVISED AUGUST 2008
ELECTRICAL CHARACTERISTICS: VS = ±5V
Boldface limits are tested at +25C.
At TA = +25°C, G = +2V/V, RF = 750Ω, and RL = 150Ω to GND, unless otherwise noted (see Figure 70).
OPA2830ID, IDGK
MIN/MAX OVER
TYP
TEMPERATURE
PARAMETER
CONDITIONS
+25°C
0°C to –40°C to
+25°C(1) +70°C(2) +85°C(2) UNITS
AC PERFORMANCE (see Figure 70)
Small-Signal Bandwidth
Gain Bandwidth Product
G = +1, VO ≤ 0.2VPP
G = +2, VO ≤ 0.2VPP
G = +5, VO ≤ 0.2VPP
G = +10, VO ≤ 0.2VPP
G ≥ +10
290
MHz
105
66
64
61
MHz
22
16
14
13
MHz
10
8
7
6
MHz
100
80
77
75
MHz
Peaking at a Gain of +1
Slew Rate
VO ≤ 0.2VPP
G = +2, 2V Step
4
dB
560
275
265
255
V/µs
Rise Time
0.5V Step
3.4
5.9
5.95
6.0
ns
Fall Time
0.5V Step
3.6
6.0
6.05
6.1
ns
Settling Time to 0.1%
G = +2, 1V Step
43
64
66
67
ns
Harmonic Distortion
2nd-Harmonic
3rd-Harmonic
Input Voltage Noise
VO = 2VPP, f = 5MHz
RL = 150Ω
RL ≥ 500Ω
RL = 150Ω
RL ≥ 500Ω
f > 1MHz
–62
–55
–53
–52
dBc
–66
–58
–57
–56
dBc
–59
–50
–49
–48
dBc
–77
–65
–62
–55
dBc
9.5
10.6
11.1
11.6 nV/√Hz
Input Current Noise
f > 1MHz
3.7
4.8
5.3
5.8
pA/√Hz
NTSC Differential Gain
0.07
%
NTSC Differential Phase
DC PERFORMANCE(4)
Open-Loop Voltage Gain
RL = 150Ω
0.17
°
74
66
65
64
dB
Input Offset Voltage
±1.5
±7.5
±8.7
±9.3
mV
Average Offset Voltage Drift
—
±27
±27
µV/°C
Input Bias Current
Input Bias Current Drift
VCM = 2.0V
+5
+10
+12
+13
µA
±44
±46
nA/°C
Input Offset Current
Input Offset Current Drift
VCM = 2.0V
±0.2
±1.1
±1.3
±1.5
µA
—
±5
±6
nA/°C
INPUT
Negative Input Voltage
–5.5
–5.4
–5.3
–5.2
V
Positive Input Voltage
3.2
3.1
3.0
2.9
V
Common-Mode Rejection Ratio (CMRR)
Input-Referred
80
76
74
71
dB
Input Impedance
Differential Mode
10 || 2.1
kΩ || pF
Common-Mode
400 || 1.2
kΩ || pF
OUTPUT
Output Voltage Swing
Current Output, Sinking and Sourcing
G = +2, RL = 1kΩ to GND
G = +2, RL = 150Ω to GND
±4.88
±4.64
±82
±4.86
±4.85
±4.84
V
±4.60
±4.58
±4.56
V
±63
±58
±53
mA
Short-Circuit Current
Output Shorted to Ground
150
mA
Closed-Loop Output Impedance
G = +2, f ≤ 100kHz
0.06
Ω
MIN/ TEST
MAX LEVEL(3)
typ
C
min
B
min
B
min
B
min
B
typ
C
min
B
max
B
max
B
max
B
min
B
min
B
min
B
min
B
max
B
max
B
typ
C
typ
C
min
A
max
A
max
B
max
A
max
B
max
A
max
B
max
A
min
A
min
A
typ
C
typ
C
min
A
min
A
min
A
typ
C
typ
C
(1) Junction temperature = ambient for +25°C specifications.
(2) Junction temperature = ambient at low temperature limits; junction temperature = ambient +18°C at high temperature limit for over
temperature specifications.
(3) Test levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value only for information.
(4) Current is considered positive out of pin.
Copyright © 2004–2008, Texas Instruments Incorporated
Product Folder Link(s): OPA2830
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