DS99R103_0710 Datasheet, PDF (2/24 Pages) National Semiconductor (TI) – 3-40MHz DC-Balanced 24-Bit LVDS Serializer and Deserializer

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V_DD)
LVCMOS/LVTTL Input Voltage
LVCMOS/LVTTL Output Voltage
LVDS Receiver Input Voltage
−0.3V to +4V
−0.3V to (V_DD +0.3V)
−0.3V to (V_DD +0.3V)
−0.3V to 3.9V
LVDS Driver Output Voltage
−0.3V to 3.9V
LVDS Output Short Circuit Duration
10 ms
Junction Temperature
+150°C
Storage Temperature
−65°C to +150°C
Lead Temperature
(Soldering, 4 seconds)
+260°C
Maximum Package Power Dissipation Capacity Package
De-rating:
48L TQFP
DS99R103
1/θ_JA °C/W above +25°C
 θ_JA
 θ_JC
DS99R104
45.8 (4L*); 75.4 (2L*) °C/W
21.0°C/W
 θ_JA
 θ_JC
45.4 (4L*); 75.0 (2L*)°C/W
21.1°C/W
48L LLP
DS99R103
 θ_JA
 θ_JC
DS99R104
 θ_JA
 θ_JC
ESD Rating (HBM)
1/θ_JA °C/W above +25°C
28 (4L*); 79.1 (2L*) °C/W
3.7°C/W
28 (4L*); 79.1 (2L*)°C/W
3.71°C/W
*JEDEC
≥±8 kV
Recommended Operating
Conditions
Supply Voltage (V_DD)
Operating Free Air
Temperature (T_A)
Clock Rate
Supply Noise
Min Nom Max
3.0
3.3
3.6
−40
+25
+85
3
40
±100
Units
V
°C
MHz
mV_P-P
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Symbol
Parameter
Conditions
LVCMOS/LVTTL DC SPECIFICATIONS
V_IH
High Level Voltage
V_IL
Low Level Input Voltage
V_CL
Input Clamp Voltage
I_CL = −18 mA
(Note 8)
I_IN
Input Current
V_IN = 0V or 3.6V
V_OH
High Level Output Voltage I_OH = −4 mA
V_OL
Low Level Output Voltage I_OL = +4 mA
I_OS
Output Short Circuit Current V_OUT = 0V
(Note 8)
I_OZ
TRI-STATE^® Output Current RPWDNB, REN = 0V
V_OUT = 0V or 2.4V
Pin/Freq.
Min Typ Max Units
Tx: DIN[23:0], TCLK,
2.0 1.5 V_DD
V
TPWDNB, DEN, TRFB, _{GND 1.5 0.8}
V
DCAOFF, DCBOFF,
VODSEL
Rx: RPWDNB, RRFB,
−0.8 −1.5 V
REN
Tx: DIN[23:0], TCLK,
TPWDNB, DEN, TRFB,
DCAOFF, DCBOFF,
−10 ±1
+10
µA
VODSEL
Rx: RPWDNB, RRFB,
REN
−20 ±5 +20 µA
Rx: ROUT[23:0], RCLK, 2.3 3.0 V_DD V
LOCK
GND 0.33 0.5 V
−40 −70 −110 mA
Rx: ROUT[23:0], RCLK,
LOCK
−30 ±0.4 +30 µA
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