NP34N055HHE Datasheet, PDF (6/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
NP34N055HHE, NP34N055IHE
2)TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
1.1±0.2
2.3 TYP.
0.5^{+−00..21}
2.3 TYP.
0.5^{+−00..21}
1.1±0.2
2.3 TYP.
0.9 MAX. 0.8 MAX.
2.3 TYP.
0.8 TYP.
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
Data Sheet D14153EJ3V0DS