NP34N055HHE Datasheet, PDF (1/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE
TO-251
NP34N055IHE
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
55
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) ^Note1
ID(DC)
ID(pulse)
±34
A
±136
A
Total Power Dissipation (TA = 25 °C)
PT
1.2
W
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current ^Note2
Single Avalanche Energy ^Note2
PT
88
W
IAS
34 / 27 / 10 A
EAS
11 / 72 / 100 mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to + 175 °C
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.70
°C/W
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14153EJ3V0DS00 (3rd edition)
The mark 5 shows major revised points.
Date Published March 2001 NS CP(K)
©
Printed in Japan
1999,2000