NP34N055HHE Datasheet, PDF (2/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP34N055HHE, NP34N055IHE
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 17 A
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 17 A
Drain Leakage Current
IDSS
VDS = 55 V, VGS = 0 V
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
Input Capacitance
Ciss
VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss
f = 1 MHz
Turn-on Delay Time
td(on)
ID = 17 A
Rise Time
tr
VGS(on) = 10 V
Turn-off Delay Time
td(off)
VDD = 28 V
Fall Time
tf
RG = 1 Ω
Total Gate Charge
QG
ID = 34 A
Gate to Source Charge
QGS
VDD = 44 V
Gate to Drain Charge
QGD
VGS = 10 V
Body Diode Forward Voltage
VF(S-D) IF = 34 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 34 A, VGS = 0 V
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
MIN. TYP. MAX.
15 19
2.0 3.0 4.0
6
12
10
±10
1600 2400
250 380
120 220
21 47
15 38
35 70
12 29
30 45
9
12
1.0
40
58
UNIT
mΩ
V
S
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
L
PG.
50 Ω
VDD
VGS = 20 → 0 V
IAS
ID
VDD
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
RG
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VDS
90 %
VDS
VDS
0
Wave Form
td(on)
VGS(on) ^{90 %}
90 %
10 % 10 %
tr td(off)
tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet D14153EJ3V0DS