NP34N055HHE Datasheet, PDF (5/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP34N055HHE, NP34N055IHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
45
Pulsed
40
35
30
25
VGS = 10 V
20
15
10
5
ID = 17 A
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
10000
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
1000
100
Coss
Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 _Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
td(on)
10 ^tr
td(off)
100.1
1
10
100
VDS - Drain to Source Voltage - V
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1
1
10
100
IF - Drain Current - A
1
0.1
1
10
100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
70
14
60
12
VDD = 44 V
50
28 V
10
11 V
40
VGS ₈
30
6
20
4
VDS
10
2
ID = 34 A
0
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
Data Sheet D14153EJ3V0DS
5