NP34N055HHE Datasheet, PDF (4/8 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP34N055HHE, NP34N055IHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 _Pulsed
10
TA = 175˚C
150˚C
1
75˚C
25˚C
−55˚C
0.1
0.01 ₁
2
3
4
5
6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 _VDS=10V
Pulsed
10
TA = 175˚C
1
75˚C
25˚C
−55˚C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
20
VGS = 10 V
10
0
1
10
100
1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
200
160
120
VGS =10 V
80
40
0
0
2
4
6
8
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
35
30
25
ID = 17 A
20
15
10
5
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0
ID = 250 µA
3.0
2.0
1.0
0
−50
0
50 100 150
Tch - Channel Temperature - ˚C
4
Data Sheet D14153EJ3V0DS