GCM31A7U2J102JX01D Datasheet, PDF (13/43 Pages) Murata Manufacturing Co., Ltd. – Chip Monolithic Ceramic Capacitors for Automotive

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10.5.20 ^{• This PDF catalog has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.}
1 ^{SGpCeMciSficeariteiosnSspaencdifiTceastitoMn eatnhdodTsest Methods}
No.
AEC-Q200
Test Item
Specifications
Temperature Compensating Type
High Dielectric Type
AEC-Q200 Test Method
1
Pre-and Post-Stress
Electrical Test
–
High Temperature The measured and observed characteristics should satisfy the
Exposure (Storage) specifications in the following table.
Appearance No marking defects
2
Capacitance
Change
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin.: QU1000
Within ±10.0%
Sit the capacitor for 1000±12 hours at 150±3°C. Let sit for 24±2
*1 ^{hours at room temperature, then measure.}
Q/D.F. 30pFmax.: QU400+20C
W.V.: 25Vmin.: 0.03 max.
C: Nominal Capacitance (pF) W.V.: 16V: 0.05 max.
I.R.
More than 10,000MΩ or 500Ω · F
(Whichever is smaller)
*1
Temperature
The measured and observed characteristics should satisfy the Fix the capacitor to the supporting jig in the same manner and
Cycle
specifications in the following table.
under the same conditions as (18). Perform the 1000 cycles
Appearance No marking defects
according to the four heat treatments listed in the following table.
Let sit for 24±2 hours at room temperature, then measure
3
Capacitance
Change
Within ±2.5% or ±0.25pF
(Whichever is larger)
30pFmin.: QU1000
Within ±10.0%
Step
1
2
3
4
*1
Temp. (°C) -55+0/-3
Room
Temp.
125+3/-0 (∆C/R7/C7)
Room
Temp.
Q/D.F. 30pFmax.: QU400+20C
W.V.: 25Vmin.: 0.03 max.
Time (min.) 15±3
1
15±3
1
C: Nominal Capacitance (pF) W.V.: 16V: 0.05 max.
• Initial measurement for high dielectric constant type
I.R.
More than 10,000MΩ or 500Ω · F
(Whichever is smaller)
*1
Perform
a
heat
treatment
at
150
W0
Y10
°C
for
one
hour
and
then
let sit for 24±2 hours at room temperature.
Perform the initial measurement.
4
Destructive
Physical Analysis
No defects or abnormalities
Per EIA-469
Moisture
Resistance
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No marking defects
Apply the 24-hour heat (25 to 65°C) and humidity (80 to 98%)
treatment shown below, 10 consecutive times.
Let sit for 24±2 hours at room temperature, then measure.
Capacitance Within ±3.0% or ±0.30pF
Change
(Whichever is larger)
Within ±12.5%
Humidity Humidity Humidity Humidity Humidity
°C
90-98% 80-98% 90-98% 80-98% 90-98%
70
65
5
Q/D.F.
30pFmin.: QU350
10pF and over, 30pF and below:
*1
QU275+₂ ^{– 5} C
10pFmax.: QU200+10C
W.V.: 25Vmin.: 0.03 max.
W.V.: 16V: 0.05 max.
60
65
50
45
40
35
C: Nominal Capacitance (pF)
30
25
20
+1-02 _°C
15
10
Initial measurement
*1
5
0
I.R.
More than 10,000MΩ or 500Ω · F
(Whichever is smaller)
-5
-10
One cycle 24 hours
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Hours
Biased Humidity
The measured and observed characteristics should satisfy the
specifications in the following table.
Appearance No marking defects
6
Capacitance Within ±3.0% or ±0.30pF
Change
(Whichever is larger)
Within ±12.5%
Apply the rated voltage and 1.3+0.2/-0Vdc (add 6.8k Ω resistor)
at 85±3°C and 80 to 85% humidity for 1000±12 hours.
Remove and let sit for 24±2 hours at room temperature, then
30pF and over: QU200
*1 measure.
Q/D.F.
30pF
and
below:
QU100+
1– 0
3
C
W.V.: 25Vmin.: 0.035 max.
The charge/discharge current is less than 50mA.
C: Nominal Capacitance (pF) W.V.: 16V: 0.05 max.
I.R.
More than 1,000MΩ or 50Ω · F
(Whichever is smaller)
*1
*1: The figure indicates typical specification. Please refer to individual specifications.
Continued on the following page.
14