MRF186 Datasheet, PDF (6/8 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
f = 960 MHz ^Zin
930 MHz
930 MHz
f = 960 MHz ^ZOL*
Z_o = 20 Ω
V_CC = 28 V, I_DQ = 2 400 mA, P_out = 120 W PEP
f
Z_in
MHz
Ω
Z_OL*
Ω
930
2.5 + j6.9
4.3 + j1.2
945
2.5 + j7.0
4.3 + j1.0
960
2.2 + j7.1
4.3 + j0.9
Z_in = Complex conjugate of source impedance.
Z_OL* = Conjugate of the optimum load impedance at
a given output power, voltage, IMD, bias current,
efficiency and frequency.
Note: Z_OL* was chosen based on tradeoffs between gain, output
power, drain efficiency and intermodulation performance.
Impedances shown represent a single channel
(1/2 of MRF186) impedance measurement.
Figure 12. Series Equivalent Input and Output Impedance
MRF186
6
MOTOROLA RF DEVICE DATA
Archived 2005