MRF186 Datasheet, PDF (2/8 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 50 µAdc)
Zero Gate Voltage Drain Current
(V_DS = 28 Vdc, V_GS = 0 Vdc)
Gate–Source Leakage Current
(V_GS = 20 Vdc, V_DS = 0 Vdc)
V_(BR)DSS
I_DSS
I_GSS
ON CHARACTERISTICS (1)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 300 µAdc Per Side)
Gate Quiescent Voltage
(V_DS = 26 Vdc, I_D = 300 mAdc Per Side)
Delta Gate Threshold Voltage (Side to Side)
(V_DS = 28 V, I_D = 300 mA Per Side)
Drain–Source On–Voltage
(V_GS = 10 Vdc, I_D = 3 Adc Per Side)
Forward Transconductance
(V_DS = 10 Vdc, I_D = 3 Adc Per Side)
V_GS(th)
V_GS(Q)
∆V_GS(Q)
V_DS(on)
g_fs
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (Per Side)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Output Capacitance (Per Side)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
Reverse Transfer Capacitance (Per Side)
(V_DS = 28 Vdc, V_GS = 0, f = 1 MHz)
C_iss
C_oss
C_rss
FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two–Tone Common Source Amplifier Power Gain
G_ps
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Two–Tone Drain Efficiency
η
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Input Return Loss
IRL
(V_DD = 28 Vdc, P_out = 120 W PEP, I_DQ = 2 x 400 mA, f1 = 945.0 MHz,
f2 = 945.1 MHz)
Output Mismatch Stress
Ψ
(V_DD = 28 Vdc, P_out = 120 W CW, I_DQ = 2 x 400 mA,
f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
MRF186
2
Min
Typ
Max
Unit
65
—
—
Vdc
—
—
1
µAdc
—
—
1
µAdc
2.5
3
4
Vdc
3.3
4.2
5
Vdc
—
—
0.3
Vdc
—
0.58
0.7
Vdc
2.4
2.8
—
S
—
177
—
pF
—
45
—
pF
—
3.4
—
pF
11
12.2
—
dB
30
35
—
%
—
–32
–28
dBc
9
16
—
dB
—
12
—
dB
—
33
—
%
—
–32
—
dBc
—
16
—
dB
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
Archived 2005