MRF186 Datasheet, PDF (4/8 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
-20
V_DD = 28 V
-30 ^{f1 = 960.0 MHz}
f2 = 960.1 MHz
I_DQ = 800 mA
-40
-50
-60
3rd Order
5th Order
7th Order
-70
0
25
50
75
100
125
150
P_out, OUTPUT POWER (WATTS) PEP
Figure 2. Intermodulation Distortion Products
versus Output Power
-25
-30
I_DQ = 200 mA
-35
-40
400 mA
-45
1200 mA
800 mA
-50
-55
-60
0.1
V_DD = 28 V
f1 = 960.0 MHz
f2 = 960.1 MHz
1
10
100
P_out, OUTPUT POWER (WATTS) PEP
Figure 3. Intermodulation Distortion
versus Output Power
16
I_DQ = 1200 mA
15
800 mA
14
400 mA
13
12 ^{200 mA}
11
1
10
P_out, OUTPUT POWER (WATTS)
V_DD = 28 V
f = 960 MHz
100
Figure 4. Power Gain versus Output Power
140
13.8
120
G_ps
13.6
100
V_DS = 28 V
13.4
f = 960 MHz
80
I_DQ = 800 mA
13.2
60
13
P_out
40
12.8
DRAIN EFFICIENCY
20
12.6
0
0
1
2
3
4
5
6
7
P_in, INPUT POWER (WATTS)
Figure 5. Output Power versus Input Power
12.4
8
140
120 ^{f = 960 MHz}
I_DQ = 800 mA
100
P_in = 5.5 W
80
60
2W
40
1W
20
0
12 14 16 18 20 22 24 26 28 30 32
V_DD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
140
120
100
TYPICAL DEVICE SHOWN
80
60
P_in = 5.5 W
40
f = 960 MHz
I_DQ = 800 mA
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate Voltage
MRF186
4
MOTOROLA RF DEVICE DATA
Archived 2005