MRF186 Datasheet, PDF (5/8 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
4
3.5
V_DS = 10 Vdc
3
200
C_iss
160
2.5
120
2
1.5
80
TYPICAL DEVICE SHOWN
1
40
0.5
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0
V_GS, GATE-SOURCE VOLTAGE (VOLTS)
V_GS = 0 Vdc
f = 1 MHz
C_oss
C_rss
10
20
30
40
50
V_DS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain Current versus Gate Voltage
Figure 9. Capacitance versus Voltage
15
13.5
-5
V_DS = 28 V
12
P_out = 120 W (PEP)
f = 960 MHz
-10
I_DQ = 800 mA
IRL
13
-15
9
G_ps
-20
6
12.5
-25
3
T_J = 200°C
T_F = 70°C
IMD
-30
0
12
-35
0
5
10
15
20
25
30
35
925 930 935 940 945 950 955 960 965
P_out, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 10. DC Safe Operating Area
Figure 11. Broadband Circuit Performance
MOTOROLA RF DEVICE DATA
MRF186
5
Archived 2005