MMDF2C02E Datasheet, PDF (4/12 Pages) ON Semiconductor – Power MOSFET

MMDF2C02E
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
0.6
0.6
ID = 3.5 A
ID = 1 A
0.5
TJ = 25°C
0.5
TJ = 25°C
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
2
3
4
5
6
7
8
9 10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0
3
4
5
6
7
8
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–to–Source Voltage
0.15
TJ = 25°C
VGS = 4.5
0.1
10 V
0.05
0
0
1
2
3
4
5
6
7
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 3.5 A
1.5
0.6
TJ = 25°C
0.5
0.4
0.3
VGS = 4.5
0.2
10 V
0.1
0
0.5
1
1.5
2
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
ID = 2 A
1.5
1.0
1.0
0.5
0.5
0
– 50 – 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation
with Temperature
0
– 50 – 25
0
25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On–Resistance Variation with
Temperature
4
Motorola TMOS Power MOSFET Transistor Device Data