MMDF2C02E Datasheet, PDF (2/12 Pages) ON Semiconductor – Power MOSFET

MMDF2C02E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
V(BR)DSS
—
IDSS
(N)
(P)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
On–State Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
—
RDS(on)
(N)
(P)
RDS(on)
(N)
(P)
ID(on)
(N)
(P)
gFS
(N)
(P)
Input Capacitance
Ciss
(N)
(P)
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
Coss
(N)
f = 1.0 MHz)
(P)
Transfer Capacitance
SWITCHING CHARACTERISTICS(3)
Crss
(N)
(P)
Turn–On Delay Time
Rise Time
td(on)
(N)
(VDD = 10 Vdc, ID = 2.0 Adc,
(P)
VGS = 4.5 Vdc,
RG = 9.1 Ω)
tr
(N)
(P)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 5.0 Vdc,
td(off)
(N)
(P)
RG = 25 Ω)
tf
(N)
(P)
Turn–On Delay Time
Rise Time
td(on)
(N)
(VDD = 10 Vdc, ID = 2.0 Adc,
(P)
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
(N)
(P)
Turn–Off Delay Time
Fall Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
td(off)
(N)
(P)
RG = 6.0 Ω)
tf
(N)
(P)
Total Gate Charge
QT
(N)
(P)
Gate–Source Charge
Gate–Drain Charge
Q1
(N)
(VDS = 16 Vdc, ID = 2.0 Adc,
(P)
VGS = 10 Vdc)
Q2
(N)
(P)
Q3
(N)
(P)
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Vdc
25
—
—
—
—
1.0
µAdc
—
—
1.0
—
—
100 nAdc
Vdc
1.0
2.0
3.0
Ohm
—
—
0.100
—
—
0.250
Ohm
—
—
0.200
—
—
0.400
2.0
—
2.0
—
—
Adc
—
mhos
1.0
2.6
—
1.0
2.8
—
—
380
532
pF
—
340
475
—
235
329
—
220
300
—
55
110
—
75
150
—
10
30
ns
—
20
40
—
35
70
—
40
80
—
19
38
—
53
106
—
25
50
—
41
82
—
7.0
21
—
13
26
—
17
30
—
29
58
—
27
48
—
30
60
—
18
30
—
28
56
—
10.6
30
nC
—
10
15
—
1.3
—
—
1.0
—
—
2.9
—
—
3.5
—
—
2.7
—
—
3.0
—
(continued)
2
Motorola TMOS Power MOSFET Transistor Device Data