MMDF2C02E Datasheet, PDF (3/12 Pages) ON Semiconductor – Power MOSFET

MMDF2C02E
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol Polarity Min
Typ
Max Unit
SOURCE–DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage(2)
(IS = 2.0 Adc, VGS = 0 Vdc)
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
(N)
—
1.0
1.4
Vdc
(P)
—
1.5
2.0
Reverse Recovery Time
see Figure 7
trr
(N)
—
34
66
ns
(P)
—
32
64
(IF = IS,
dIS/dt = 100 A/µs)
ta
(N)
—
17
—
(P)
—
19
—
tb
(N)
—
17
—
(P)
—
12
—
QRR
(N)
—
0.025
—
µC
(P)
—
0.035
—
(1) Negative signs for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
7 _{VGS = 10 V}
6 ^{4.5 V}
4.3 V
3.9 V
5 _{4.1 V}
3.7 V
3.5 V
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
TJ = 25°C
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
VGS = 10 7 V 5 V _{4.7 V}
TJ = 25°C
4.5 V
3
4.3 V
2
4.1 V
3.9 V
1
3.7 V
3.5 V
3.3 V
0
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
7
VDS ≥ 10 V
6 TJ = 25°C
5
4
100°C
3
25°C
2
1
TJ = –55°C
0
1.5
2
2.5
3
3.5
4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
4
VDS ≥ 10 V
3
2
1
100°C
25°C
TJ = –55°C
0
2.5
3
3.5
4
4.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Motorola TMOS Power MOSFET Transistor Device Data
3