MC74HC4046A Datasheet, PDF (2/15 Pages) ON Semiconductor – Phase-Locked Loop

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _MC74HC4046A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS*}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _PD
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 1.5 to VCC + 1.5 V
– 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 25
mA
DC Supply Current, VCC and GND Pins
± 50
mA
Power Dissipation in Still Air
Plastic DIP†
750
mW
SOIC Package†
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
Plastic DIP and SOIC Package†
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{*Maximum Ratings are those values beyond which damage to the device may occur.}
Functional operation should be restricted to the Recommended Operating Conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v ^{Vout should be constrained to the}
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RECOMMENDED OPERATING CONDITIONS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage (Referenced to GND)}
3.0 6.0 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VCC
DC Supply Voltage (Referenced to GND) NON–VCO
2.0 6.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _TA
Operating Temperature, All Package Types
– 55 + 125 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tr, tf Input Rise and Fall Time}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(Pin 5)}
VCC = 2.0 V 0
VCC = 4.5 V 0
VCC = 6.0 V 0
1000 ns
500
400
[Phase Comparator Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
Volts
– 55 to
25_C
≤ 85°C ≤ 125°C Unit
VIH Minimum High–Level Input
Voltage DC Coupled
SIGIN, COMPIN
Vout = 0.1 V or VCC – 0.1 V
|Iout| ≤ 20 µA
2.0
1.5
4.5
3.15
6.0
4.2
1.5
1.5
V
3.15
3.15
4.2
4.2
VIL Maximum Low–Level Input
Voltage DC Coupled
SIGIN, COMPIN
Vout = 0.1 V or VCC – 0.1 V
|Iout| ≤ 20 µA
2.0
0.5
4.5
1.35
6.0
1.8
0.5
0.5
V
1.35
1.35
1.8
1.8
VOH
Minimum High–Level
Output Voltage
PCPOUT, PCnOUT
Vin = VIH or VIL
|Iout| ≤ 20 µA
2.0
1.9
4.5
4.4
6.0
5.9
1.9
1.9
V
4.4
4.4
5.9
5.9
Vin = VIH or VIL
|Iout| ≤ 4.0 mA
|Iout| ≤ 5.2 mA
4.5
3.98
6.0
5.48
3.84
3.7
5.34
5.2
(continued)
MOTOROLA
3–2
High–Speed CMOS Logic Data
DL129 — Rev 6