MC9S12H256 Datasheet, PDF (104/130 Pages) Motorola, Inc – Device User Guide

MC9S12H256 Device User Gui^Fde^r—^eeV^s01^c.1^a8 ^{le Semiconductor, Inc.}
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
t_era ≈ 4000 ⋅ _f--N----_V----1_M-----_O----_P--
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
t_mass ≈ 20000 ⋅ _f--N----_V----1_M-----_O----_P--
The setup time can be ignored for this operation.
Table A-11 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max
Unit
1 D External Oscillator Clock
f_NVMOSC
0.5
32 ¹
MHz
2 D Bus frequency for Programming or Erase Operations f_NVMBUS
1
MHz
3 D Operating Frequency
f_NVMOP
150
200
kHz
4 P Single Word Programming Time
t_swpgm
46 ²
74.5 ³
µs
5 D _{Flash Burst Programming consecutive word} ⁴
t_bwpgm
20.4 ²
31 ³
µs
6 D _{Flash Burst Programming Time for 32 Words} ⁴
t_brpgm
678.4 ²
1035.5 ³
µs
7 P Sector Erase Time
t_era
20 ⁵
26.7 ³
ms
8 P Mass Erase Time
t_mass
100 ⁵
133 ³
ms
NOTES:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency f_NVMOP and maximum bus frequency
f_bus.
3. Maximum Erase and Programming times are achieved under particular combinations of f_NVMOP and bus frequency f_bus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. urst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f_NVMOP.
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
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