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| CM75MX-12A Datasheet, PDF (8/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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RECTIFIER DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Converter part
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100 0
Tj = 25°C
Tj = 125°C
0.5
1.0
1.5
2.0
FORWARD VOLTAGE VF (V)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
102
7
5
3
2
101
7
5
3
2
Tj = 25°C
Tj = 125°C
100
0 0.5 1 1.5 2 2.5 3 3.5 4
FORWARD VOLTAGE VF (V)
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
3.5
VGE = 15V
3
2.5
2
1.5
1
0.5
0
0
Tj = 25°C
Tj = 125°C
10 20 30 40 50 60 70 80 90 100
COLLECTOR CURRENT IC (A)
Jan. 2009
8
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