CM75MX-12A Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR/R
B(25/50)
P25
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Limits
Min.
Typ.
Max. ^Unit
4.85
5.00
5.15
kΩ
–7.3
—
+7.8
%
(Note. 7) —
3375
—
K
—
—
10
mW
MODULE
Symbol
Rth(c-f)
Parameter
Conditions
Contact thermal resistance Thermal grease applied
(Case to fin)
(Note. 1) per 1 module
Min.
(Note. 2) —
Limits
Typ.
0.015
Max.
—
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7:
B(25/50)
=
In(
R25
R50
)/(
1
T25
1)
T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
K/W
Chip Location (Top view)
(121.7)
(110)
Dimensions in mm (tolerance: ±1mm)
0
25.5
26.5
29.5
42.9
53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
54
55
56
57
58
59
60
61
CR
RN
CR
SN
CR
TN
CR CR CR
RP SP TP
Tr
Br
Tr
UP
Tr
VP
D
B
Di Tr Di
UP UN VP
Di
UN
riVTDVNrNWiTDWPrPiTDWhWTNNir
30
29
28
27
26
25
24
23
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
17.8
27.1 (Tr/UP, Tr/VP, Tr/WP, Th)
27.6 (Di/Br)
33.6 (Tr/WN)
34.7 (Di/UP, Di/VP, Di/WP)
35.2 (Tr/UN, Tr/VN)
41.2 (Di/WN)
42.0 (Di/UN, Di/VN)
LABEL SIDE
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC thermistor
Jan. 2009
4