CM75MX-12A Datasheet, PDF (2/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
VCES
Collector-emitter voltage
G-E Short
VGES
IC
ICRM
PC
Gate-emitter voltage
Collector current
Maximum collector dissipation
C-E Short
DC, TC = 70°C
Pulse
TC = 25°C
IE (Note.3) Emitter current
TC = 25°C
IERM(Note.3) (Free wheeling diode forward current) Pulse
Conditions
MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
Rating
Unit
600
V
±20
(Note. 1)
75
A
(Note. 4)
150
(Note. 1, 5)
280
W
(Note. 1)
75
A
(Note. 4)
150
BRAKE PART
Symbol
Parameter
Conditions
Rating
Unit
VCES
VGES
IC
ICRM
PC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 97°C
Pulse
TC = 25°C
600
V
±20
(Note. 1)
50
A
(Note. 4)
100
(Note. 1, 5)
280
W
VRRM(Note.3) Repetitive peak reverse voltage
IF (Note.3) _{Forward current}
IFRM(Note.3)
TC = 25°C
Pulse
600
V
(Note. 1)
50
A
(Note. 4)
100
CONVERTER PART
Symbol
VRRM
Ea
IO
IFSM
I²t
Parameter
Conditions
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
3-phase full wave rectifying, TC = 140°C
(Note. 1)
Surge forward current
The sine half wave 1 cycle peak value, f = 60Hz,
non-repetitive
Current square time
Value for one cycle of surge current
Rating
800
220
75
750
2340
Unit
V
Vrms
A
A^2S
MODULE
Symbol
Parameter
Conditions
Tj
Tstg
Viso
—
—
—
Junction temperature
Storage temperature
Isolation voltage
Base plate flatness
Torque strength
Weight
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
(Note. 8)
Mounting
M5 screw
(Typical)
Note. 8: The base plate flatness measurement points are in the following figure.
:
9
–

)FBU
TJOL
TJEF
É¿
DPOWFY

–ɿ
DPODBWF
Rating
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
Unit
°C
Vrms
μm
N·m
g
Jan. 2009
2