CM75MX-12A Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V
5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter saturation
voltage
IC = 75A, VGE = 15V
IC = 75A, VGE = 15V
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
Chip
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
(Note. 6) —
—
QG
Total gate charge
VCC = 300V, IC = 75A, VGE = 15V
—
td(on)
Turn-on delay time
VCC = 300V, IC = 75A
—
tr
Turn-on rise time
VGE = ±15V, RG = 8.2Ω
—
td(off)
Turn-off delay time
Inductive load
—
tf
Turn-off fall time
—
trr (Note.3) Reverse recovery time
(IE = 75A)
—
Qrr (Note.3) Reverse recovery charge
—
VEC(Note.3) Emitter-collector voltage
IE = 75A, VGE = 0V
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
IE = 75A, VGE = 0V
Chip
—
Rth(j-c)Q Thermal resistance
per IGBT
—
(Note. 1)
Rth(j-c)R (Junction to case)
per free wheeling diode
—
RGint
Internal gate resistance
TC = 25°C, per switch
—
RG
External gate resistance
8.0
Limits
Typ.
Max. ^Unit
—
1
mA
6
7
V
—
0.5
μA
1.7
2.1
1.9
—
V
1.6
—
—
9.3
—
1.0
nF
—
0.3
200
—
nC
—
100
—
100
—
300
ns
—
600
—
200
1.8
—
μC
2.0
2.8
1.95
—
V
1.9
—
—
0.44 _K/W
—
0.85
0
—
Ω
—
83
BRAKE PART
Symbol
Parameter
Conditions
Min.
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
—
VGE(th) Gate-emitter threshold voltage IC = 5mA, VCE = 10V
5
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
VCE(sat)
Collector-emitter saturation
voltage
IC = 50A, VGE = 15V
IC = 50A, VGE = 15V
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
Chip
—
Cies
Coes
Cres
Input capacitance
Output capacitance
Reverse transfer capacitance
VCE = 10V
VGE = 0V
—
(Note. 6) —
—
QG
Total gate charge
VCC = 300V, IC = 50A, VGE = 15V
—
IRRM(Note.3) Repetitive peak reverse current VR = VRRM
—
VFM(Note.3) Forward voltage drop
IF = 50A
Tj = 25°C
—
(Note. 6)
Tj = 125°C
—
IF = 50A
Chip
—
Rth(j-c)Q Thermal resistance
per IGBT
—
Rth(j-c)R
(Note. 1)
(Junction to case)
per Clamp diode
—
RGint
Internal gate resistance
TC = 25°C
—
RG
External gate resistance
13
Limits
Typ.
Max. ^Unit
—
1
mA
6
7
V
—
0.5
μA
1.7
2.1
1.9
—
V
1.6
—
—
9.3
—
1.0
nF
—
0.3
200
—
nC
—
1
mA
2.0
2.8
1.95
—
V
1.9
—
—
0.44
K/W
—
0.85
0
—
Ω
—
125
CONVERTER PART
Symbol
IRRM
VF
Rth(j-c)
Parameter
Conditions
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case) ^{(Note. 1)}
VR = VRRM, Tj = 150°C
IF = 75A
per Diode
3
Limits
Min.
Typ.
Max. ^Unit
—
—
20
mA
—
1.2
1.6
V
—
—
0.24 K/W
Jan. 2009