CM75MX-12A Datasheet, PDF (7/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM75MX-12A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10³
7
5
3
tf
2
td(off)
10²
7
Conditions:
5 _{VCC = 300V}
td(on)
tr
3 ^{VGE = ±15V}
2
IC = 75A
Tj = 125°C
Inductive load
101¹ _{00 2 3 5 7 101}
23
5 7 10²
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10²
7 ^Conditions:
5 _{VCC = 300V}
3 VGE = ±15V
2 _{IC, IE = 75A}
10^{1 Tj = 125°C}
7 Inductive load
5
3
Eoff
2
Eon
10⁰
7
Err
5
3
2
10^–₁¹ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 75A
VCC = 200V
15
VCC = 300V
10
5
0
0
100
200
300
GATE CHARGE QG (nC)
7
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
10¹
7 ^Conditions:
VCC = 300V
5 _{VGE = ±15V}
3 ^{RG = 8.2Ω}
Tj = 125°C
2 _{Inductive load}
10⁰
Eoff
7
5
3
2
10^–₁¹ ₀₀
23
Err
Eon
5 7 10¹
23
5 7 10²
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
10³
7 ^Conditions:
VCC = 300V
5 _{VGE = ±15V}
3 RG = 8.2Ω
2 ^{Tj = 25°C}
Inductive load
10²
7
5
trr
3
Irr
2
101¹ _{00 2 3 5 7 101 2 3 5 7 102}
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10⁰
7 Single pulse
5 _{TC = 25°C}
3
2
10^–1
7
5
3
2
10^–2
7 ^{Inverter IGBT part : Per unit base = Rth(j–c) = 0.44K/W}
5 Inverter FWDi part : Per unit base = Rth(j–c) = 0.85K/W
3 ^{Converter-Di part : Per unit base = Rth(j–c) = 0.24K/W}
2 Brake IGBT part : Per unit base = Rth(j–c) = 0.44K/W
10^{–3 Brake Clamp-Di part : Per unit base = Rth(j–c) = 0.85K/W}
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jan. 2009