CM1000E4C-66R_12 Datasheet, PDF (8/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
4000
VCC  25 00 V, VGE = ± 15V
Tj = 150 °C, RG(o ff) = 8.4Ω
3000
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
16
V_CC  25 00V, V_GE = ±1 5V
R _G(on) = 2.4Ω, R_{G( off)} = 8 .4 Ω
Tj = 1 50°C
12
2000
1000
0
0
10 00
2 000
3000
4000
Collecto r-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
4000
VCC  25 00 V, di /d t < 6 kA/µs
Tj = 150 °C
3000
8
4
0
0
1 000
20 00
3000
4000
Collector-Emitter Voltage [V]
2000
1000
0
0
10 00
2 000
3000
4000
Emitter-Collector Voltage [V]
December 2012 _(HVM-1055-F)
8