CM1000E4C-66R_12 Datasheet, PDF (4/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
Tj = 1 50°C
1600
1200
V_GE = 1 9V
V_GE = 1 5V
V_{G E} = 13 V
V_GE = 11 V
800
400
V_GE = 9V
0
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
TRANSFER CHARACTERISTICS
(TYPICAL)
2000
V_CE = V_GE
1600
1200
800
400
Tj = 1 50 °C
Tj = 25° C
0
0
2
4
6
8 10 12
Gate - Emi tter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
2000
VGE = 15 V
1600
1200
Tj = 25 °C
Tj = 1 25 °C
800
Tj = 1 50°C
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2000
1600
1200
Tj = 1 25°C
Tj = 25°C
Tj = 1 50 °C
800
400
400
0
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
0
0
1
2
3
4
5
Emitter-Collector Voltage [V]
December 2012 _(HVM-1055-F)
4