CM1000E4C-66R_12 Datasheet, PDF (1/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1000E4C-66R
 I_C 1000A _{·······························································}
 V_{CES ·························································}3300V
 1-element in a Pack (for brake chopper)
 Insulated Type
 LPT-IGBT / Soft Recovery Diode
 AlSiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
December 2012 _HVM-1055-F
1