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CM1000E4C-66R_12 Datasheet, PDF (7/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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< HVIGBT MODULES >
CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 18 00 V, VGE = ± 15V
RG(on) = 2.4â¦, LS = 150 nH
Tj = 1 25°C, In ductive l oa d
10000
10
Irr
1000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
VCC = 18 00 V, VGE = ± 15V
RG(on) = 2.4â¦, LS = 150 nH
Tj = 1 50°C, In ductive l oa d
10000
10
Irr
1000
1
trr
100
1
trr
100
0.1
100
1000
Emitter Current [A]
10
10 00 0
0.1
100
1000
Emitter Current [A]
10
10 00 0
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R th(j-c )Q = 12 .0 K/kW
R th(j-c )D = 22.5K/kW
1
0.8
0.6
0.4
0.2
0
0. 001
0.01
0.1
1
10
Time [s]
Z ï¥ R 1ïexp n
th( jïc) (t) ï½
iï½1
ï¯ï¬
i
ï
ï¯ï®
ï´ ï¼ ï§ï¦
ï¯ ï§
ï
t
ï·ï¶
ï·
ï½ ï¨ i ï¸
ï¯ï¾
Ri [K/kW] :
ï´i [sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
December 2012 (HVM-1055-F)
7
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