CM1000E4C-66R_12 Datasheet, PDF (5/9 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1000E4C-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
1000
Ci es
100
10
Co es
VGE = 0V, Tj = 2 5° C
f = 10 0kHz
Cres
1
0. 1
1
10
100
Coll ector-Emitter Voltage [V]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 18 00 V, VGE = ± 15V
RG(on) = 2.4Ω, RG( off) = 8 .4 Ω
6
L_S = 1 50n H, Tj = 1 25° C
In ductive l oa d
Eon
5
4
Eo ff
3
2
Ere c
1
0
0
400
800 1200 1600 2000
Collector Current [A]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 18 00V, IC = 1 000 A
Tj = 2 5° C
15
10
5
0
-5
-10
-15
0
4
8
12
16
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
VCC = 18 00 V, VGE = ± 15V
RG(on) = 2.4Ω, RG( off) = 8 .4 Ω
6
L_S = 1 50n H, Tj = 1 50° C
Eon
In ductive l oa d
5
4
Eo ff
3
2
Erec
1
0
0
400
800 1200 1600 2000
Collector Current [A]
December 2012 _(HVM-1055-F)
5