CM400HG-66H Datasheet, PDF (7/7 Pages) Mitsubishi Electric Semiconductor – 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
1200
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
VCC ≤ 2200V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 5Ω
1000
800
600
400
200
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
1200
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
(RRSOA)
VCC ≤ 2200V, di/dt ≤ 2200A/µs
Tj = 125°C
1000
800
600
400
200
0
0
1000
2000
3000
4000
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005