CM400HG-66H Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES
CM400HG-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM400HG-66H
q IC ................................................................... 400A
q VCES ....................................................... 3300V
q High Insulated Type
q 1-element in a Pack
q AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
73±0.5
57±0.25
2 - M8 NUTS
Dimensions in mm
29.7
2
(2) C
1
36
EG
C
5
21.6±0.3
screwing depth
min. 4
4 - φ 7 MOUNTING HOLES
12.9±0.3
16.2±0.3
screwing depth
min. 16.5
(1) E
G
EC
CIRCUIT DIAGRAM
22±0.3
41±0.5
LABEL
17.4±0.3
2.8
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005